voltage variable absorptive attenuator, 800 - 1000 mhz at10 - 0009 sow - 16 v 7.00 features n input ip3: +31 dbm min. (full attenuation range) n input ip3 is 15 - 20 db better than gaas n linear operation: +20 dbm mi n. n plastic soic, wide body, smt package n 38 db dynamic range (with 30 ma bias current) n single control voltage n 50 ohm impedance n li near driver, dr65 - 0002, available n test boards are available n tape and reel packaging available description m/a - com's at10 - 0009 i s a pin diode based voltage variable attenuator. this device is in a soic - 16, wide body plastic surface mount package. these att enuators have linear operating power and input intercept point levels 15 - 20 db better than gaas fet mmic voltage variable attenuators. they are ideally suited for use where low distortion, high linear operating power and high dynamic range are requ ired. these devices are optimized for the gsm frequency band, but exhibit excellent performance and repeatability over the enti re specified frequency band. the at10 - 0009 is ideally suited for wireless communications systems. electrical specifications : t a = 25 c parameter test conditions frequency units min typical max insertion loss 0 volts 800 - 1000 mhz 925 - 960 mhz db db ? ? 3.5 3. 3 4.2 3.9 attenuation (above loss) 12 ma bias current 800 - 1000 mhz 925 - 960 mhz db db 30 33 - 3 8 ? ? frequency flatness 0 to 30 db attenuation 800 - 1000 mhz 925 - 960 mhz db db ? ? 1. 5 0. 4 2.5 0. 8 vswr 0 to 30 db attenuation 800 - 1000 mhz 925 - 960 mhz ratio ratio ? ? 1. 6 :1 1. 4 :1 2 . 0 :1 1 . 7 :1 switching speed 50% control to 90%/10% rf 800 - 1000 mhz s ? ? 10 .0 linear operation ? 800 - 1000 mhz dbm ? +20 ? input ip 3 two - tone inputs up to +10 dbm 800 - 1000 mhz dbm +3 5 + 40 ? - i control ? 800 - 1000 mhz ma ? ? 30 package outline conforms to jedec standard ms - 013aa.
voltage variable absorptive attenuator, 800 - 1000 mhz at10 - 0009 specifications subject to change without notice. n north america: tel. (800) 366 - 2266 n asia/pacific: tel.+ 81 - 44 - 844 - 8296 , fax + 81 - 44 - 844 - 8298 n europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 visit www.macom.com for additional data sheets and product information. v 7.00 2 recommended pcb configuration pin configuration pin # function pin # function 1 gnd 9 gnd 2 rf 10 rf 3 gnd 11 gnd 4 gnd 12 gnd 5 gnd 13 gnd 6 gnd 14 gnd 7 bias 2 15 bias 2 8 gnd 16 gnd 2. bias currents may be applied to pin 7 or 15. the unused pin should be isolated. typical performance curves attenuation flatness (db) @ +25c insertion loss 1 2 3 4 5 6 750 825 900 975 1050 frequency (mhz) loss (db) +25c +85c -40c -3 -2 -1 0 1 2 3 750 825 900 975 1050 frequency (mhz) flatness (db) 30 db 20 db 10 db ref 1. operation of this device above any one of these parameters may cause permanent damage. parameter absolute maximum max. input power + 27 dbm operating temperature - 40c to +85c storage temperature - 65c to +125c absolute maximum ratings 1
voltage variable absorptive attenuator, 800 - 1000 mhz at10 - 0009 specifications subject to change without notice. n north america: tel. (800) 366 - 2266 n asia/pacific: tel.+ 81 - 44 - 844 - 8296 , fax + 81 - 44 - 844 - 8298 n europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 visit www.macom.com for additional data sheets and product information. v 7.00 typical performance curves attenuation vs. bias current typical vswr @ +25c 3 part number package at10 - 0009 tube at10 - 0009tr tape and reel (1k reel) at10 - 0009 - tb unit mounted on test board dr65 - 0002 - tbg unit with driver on test board ordering information 1.0 1.5 2.0 2.5 750 825 900 975 1050 frequency (mhz) vswr (ratio) ref 30 db 15 db -42 -36 -30 -24 -18 -12 -6 0 0 1 2 3 4 5 6 7 8 9 10 bias current (ma) attenuation (db) +85c +25c -40c
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